SI4848DY

PRODUCT SUMMARY

VOS (V)

rOS(on) (Q)

10 (A)

0.085@VGS=10V

3.7

150

0.095 @ VGS = 6.0 V

3.5

SPECIFICATIONS (TJ = 25¡ãC UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Static

Gate Threshold Voltage

VGS(th)

VOS = VGS£¬ 10 = 250µA

2.0

V

Gate-Body Leakage

IGSS

VOS = 0 V£¬ VGS=ÍÁ20 V

ÍÁtOO

nA

VOS=t20V£¬VGS=OV

Zero Gate Voltage Drain Current

loss

VOS = t20 V£¬ VGS = 0 V£¬ TJ = 55¡ãC

5

µA

On-State Drain Current^a

10(on)

VOS;0. 5 V£¬ VGS = to V

25

A

VGS=tO V£¬10=3.5A

0.068

0.085

Drain-Source On-State Resistance^a

rOS(on)

Q

VGS = 6.0 V£¬ 10 = 3.0 A

0.076

0.095

Forward Transconductanc&

gfs

VOS = 15 V£¬ 10 = 5 A

15

S

Diode Forward Voltage^a

VSO

Is=2.5A£¬VGs=OV

0.75

1.2

V

Dynamic^b

Total Gate Charge

Og

17

21

Gate-Source Charge

Ogs

VOS = 75 V£¬ VGS = 10 V£¬ 10 = 3.5 A

3.2

nC

Gate-Drain Charge

Og²Å

6.0

Gate Resistance

Rg

0.5

0.85

1.8

Q

Turn-On Delay Tirne

td(on)

9.0

14

Rise Tirne

VOO = 75 V£¬ RL = 21 Q

10

15

Turn-Off Delay Tirne

td(¡£âã)

10'" 3.5A£¬ VGEN= 10 V£¬ RG= 6 Q

24

35

ns

Fall Tirne

tf

17

25

Source-Drain Reverse Recovery Tirne

IF = 2.5 A£¬ dildt = 100 AIµs

45

70